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PRELIMINARY PRODUCT INFORMATION
MOS FIELD EFFECT TRANSISTOR
2SK3221
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK3221 is N channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.
ORDERING INFORMATION
Part number 2SK3221 Package Isolated TO-220
FEATURES
*Low gate charge QG = 9 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 2.0 A) *Gate voltage rating 30 V *Low oN-state resistance RDS(on) = 4.4 (MAX.) (VGS = 10 V, ID = 1.0 A) *Avalanche capability ratings *Isolated TO-220 package
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to source voltage (VGS = 0 V) Gate to source voltage (VDS = 0 V) Drain current(DC) (TC = 25C) Drain current(pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
600 30 2.0 8.0 2.0 25 150 -55 to +150 2.0 2.7 3.5
V V A A W W C C A mJ V/ns
Total power dissipation (TA = 25C) Total power dissipation (TC = 25C) Channel temperature Storage temperature Single avalanche current Single avalanche energy Diode recovery dv/dt
Note3 Note2
IAS EAS dv/dt
Note2
Notes 1. PW 10 s, Duty Cycle 1% 2. Starting Tch = 25C, VDD = 150 V, RG = 25 , VGS = 20 V0 V 3. IF 1.0 A, Vclamp = 600 V, di/dt 100 A/s, TA = 25C
The information contained in this document is being issued in advance of the production cycle for the device. The parameters for the device may change before final production or NEC Corporation, at its own discretion, may withdraw the device prior to its production.
Document No. D13789EJ1V0PM00 (1st edition) Date Published September 1998 NS CP (K) Printed in Japan
General -Purpose Device Department Semiconductor Solution Engineering Division NEC Corporation PHONE : +81-44-548-7914 DIRECT
(c)
1998
2SK3221
ELECTRICAL CHARACTERISTICS(TA = 25C)
Characteristics Drain leakage current Gate leakage current Gate cut-off voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Diode forward voltage Reverse recovery time Reverse recovery charge Symbol IDSS IGSS
VGS(off)
Test Conditions VDS = 600 V, VGS = 0 V VGS = 30 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 1.0 A VGS = 10 V, ID = 1.0 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 150 V, ID = 1.0 A VGS(on) = 10 V RG = 10
MIN.
TYP.
MAX. 100 10
Unit
A A
V S
2.5 0.5 3.3 290 60 5 7 2 20 10
3.5
| yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) Trr Qrr
4.4
pF pF pF ns ns ns ns nC nC nC V
VDD = 450 V VGS = 10 V ID = 2.0 A IF = 2.0 A, VGS = 0 V IF = 2.0 A, VGS = 0 V di/dt = 50 A/s
9 2.4 2 0.9 0.9 2.0
s C
Test circuit 1
Avalanche capability
D.U.T. RG = 25
Test circuit 2 Switching time
D.U.T. RL
VGS VGS
Wave Form
L PG.
PG. VGS = 20 0 V
50
VDD
RG RG = 10
0 ID
10 % 90 %
VGS (on)
90 %
VDD
90 %
BVDSS IAS ID VDD VDS
VGS 0 =1 s Duty Cycle < 1 % =
ID ID
Wave Form
0
10 % td (on) ton tr td (off) toff
10 % tf
Starting Tch
Test circuit 3 Gate charge
D.U.T. IG = 2 mA PG. 50
RL VDD
2
Preliminary Product Information
2SK3221
Package Drawing(Unit : mm)
Isolated TO-220 (MP-45F)
10.00.3
3.20.2
4.50.2 2.70.2
15.00.3
30.1
12.00.2
Drain
40.2
Gate
Body Diode
13.5 MIN.
Gate Protection Diode
Source
0.70.1 2.54 TYP.
1.30.2 1.50.2 2.54 TYP.
2.50.1 0.650.1 1.Gate 2.Drain 3.Source
123
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
Preliminary Product Information
3
2SK3221
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product.
M4 96. 5

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